2N3955 DATASHEET PDF

2N datasheet, 2N circuit, 2N data sheet: INTERFET – N-Channel Dual Silicon Junction Field-Effect Transistor,alldatasheet, datasheet, Datasheet. 2N Transistor Datasheet, 2N Equivalent, PDF Data Sheets. MOSFET. Parameters and Characteristics. Electronic Component Catalog. Information furnished by Linear Integrated Systems and Micross Components is believed to be accurate and reliable. However, no responsibility is assumed for.

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2N3955 PDF Datasheet浏览和下载

Since the early s, the 2N transistor has been heavily targeted by counterfeiters, who substitute much smaller silicon dies with daatsheet power ratings, use inferior mounting techniques, and fake the markings.

KD is a higher power equivalent used in Eastern Bloc countries, and is intended for general purpose applications.

Other manufacturers around this time also would specify similar values e. Views Read Edit View history. It has a transition frequency of 2. Graf; William Sheets Nevertheless, a 2N and many other power transistors originating from this era cannot be assumed to have great high-frequency performance and there can be degradation of phase-shift and open-loop gain even within the audio frequency range.

RCA by had changed dataseet specification to give 2.

By using this site, you agree to the Terms of Use and Privacy Policy. The 2N remains very popular as a series pass transistor in linear power supplies and is still used in for medium- current and high- power circuits dataeheet, including low frequency power converters although its use in audio power datasheeet and DC-to-AC inverters is now less common and its use in higher frequency switch-mode applications never was very practical.

It is by now unlikely to actually obtain a genuine 2N transistor when using popular sales platforms such as Amazon or Ebay; classic electronics distributors are mostly still able to properly source them.

The maximum collector-to-emitter voltage for the 2N, like other transistors, depends on the resistance path the external circuit provides between the base and emitter of the transistor; with ohms a 70 volt breakdown rating, V CERand the Collector-Emitter Sustaining voltage, V CEO susis given by ON Semiconductor.

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The historically-significant 2N was designed by Herb Meisel’s engineering group with RCA; it was the first multi-amp silicon power transistor to sell for less than one dollar, and became an industry workhorse standard.

An MJ PNPwhich is also manufactured using the epitaxial process today, is a complementary transistor to the 2N The device is designed to operate with an efficient heatsink, but care must be taken to mount the device properly, [7] [8] [9] else physical damage or worsened power handling may result, especially with cases or heatsinks that are not perfectly flat.

Sometimes the V CBO breakdown voltage the maximum voltage between collector and base, with the emitter open, an unrealistic arrangement in practical circuits is given as the only voltage rating, which can cause confusion. Although the original 2N went into decline relative to epitaxial-base transistors because of high manufacturing costs, the epitaxial-base version continued to be used in both linear amplifiers and switching supplies. The 2N, 2N, and 2N devices, for example, which date back to the s but have been improved, are still useful in new designs and are still popular for experimenters.

Variants with higher voltage ratings e.

2N Datasheet, PDF – Alldatasheet

The team of design, production, and applications engineers received RCA Electronic Components achievement awards in Modern successors to the 2N can be much datasheft suitable in fast-switching circuits or high-end audio power amplifiers. The art of electronics 2nd ed. Retrieved 31 October It was produced exclusively by the Czechoslovakian electronics company Tesla. The 2Nwith a TO-3 case has slightly lower gain but significantly higher maximum ratings W, Vceo, 16 Amps.

With an “infinite” heatsink, dstasheet is: Retrieved 7 November It often has a transition frequency of around 3. From Wikipedia, the free encyclopedia. The total power dissipation written P D dataheet most American datasheets, P tot in European ones depends on the heatsink to which the 2N is connected. The frequency at which gain begins to drop off may be much lower, see below.

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In the sixties and early seventies, Philips produced similar devices encapsulated in TO-3 packages under the reference BDY20 described as being for “hifi” purposes and BDY38 although the BDY38 has lower voltage ratings than the 2N The KD have higher power and higher current than 2N Modern 2N datasheets often, but not always, specify f T of 2.

KD are datashwet in a TO-3 case style called T41 by Teslait is a 20 amp80 voltwatt power transistor. Build your own low-power transmitters: Commons category link from Wikidata.

Retrieved from ” https: The 2N is a much lower power version of the 2N, rated at 25 W55 V and 4 Abut became almost obsolete about the late s when many TO devices were withdrawn from mainstream manufacturers’s lists.

InterFET Corp. Page Selector – 2N Datasheet

It was introduced in the early s by RCA using a hometaxial power transistor process, transitioned to an epitaxial base in the mids. In other projects Wikimedia Commons. The robot builder’s bonanza 2nd ed. Wikimedia Commons has media related to 2N It was second sourced by other manufacturers; Texas Instruments listed a single-diffused mesa version of the device in an August datasheet.

2N3955 Datasheet

The 2N is a silicon NPN power transistor intended for general purpose applications. This page was last edited on 22 Novemberat Also the higher frequency response has improved performance when dattasheet in audio amplifiers. With changes to semiconductor manufacturing technology, the original process became economically uncompetitive in the mids, and a similar device was created using epitaxial base technology.

The exact performance characteristics depend on the manufacturer and date; before the move to the epitaxial base version in the mids the f T could be as low as 0.